Current trends and future prospects of MOCVD Technology

As we all know, this year, the Chinese led companies in the field of upstream chip action endless, have started the plant, plant expansion plan. It is reported that China's purchase of MOCVD orders have been discharged after three years. Industry experts believe that, with the future of a large number of MOCVD put into operation, chip prices will decline, which is good news for the industry, but which companies eventually seize the opportunity, talent is the most critical factor. How about the quality of the MOCVD? Is the model advanced? What is the trend of the next generation of MOCVD technology? These are the companies should think about the problem, but also from the MichaEL Heuken report to get a lot of inspiration.

Michael Heuken first to carry on the forecast to the semiconductor lighting market in the future, he believes that from 2009 to 2014, the semiconductor lighting market will maintain an annual growth rate of 31% of the speed, which will greatly promote the development of semiconductor lighting technology. Large size substrate is the future trend, because it meets the needs of price reduction, increased production capacity, high degree of automation and maximum utilization of silicon substrate. At present, 2 inches and 4 inches is the mainstream of the market, but some companies have begun to consider the 6 inches, and even began to do a design of 8 inches. According to Michael Heuken, Aixtron's Crius MOCVD 200mm/300mm system can be grown on large size substrates and maintain good thickness and wavelength uniformity.

Michael Heuken believes that temperature management is very important, he said, "there are three key indicators of extension technology, the first one is the temperature, temperature is second, third is the temperature, temperature management can help strengthen the unity and the relatively large diameter wafer can also do better control.

Future technologies that may be integrated with LED include Si based technology and GaN quantum wire technology.

In addition, Michael Heuken also describes the newly developed G5 HT device, which is able to meet the 56x2 inch / 14x4 inch / 8x6 inch / 5x8 inch epitaxial demand in. G5 HT at high pressure above 600 mbar can achieve high quality gallium nitride precipitation at high rates, compared to G4 HT capacity can be increased by 33%.