The first batch of production technology of green laser with 2 inch GaN substrate

Following the 2009 development of wavelength 531 nm, laser technology is applied to the original green laser TV and portable laser projector, on Sumitomo recently using electrical plant its own research and development of H-VPE (hydride vapor phase epitaxy) manufacturing technology, successfully developed can be used in the primary (direct) green laser, size 2 inch, dislocation density (Dislocation density) 5 times up to 10 of the semi polar and non polar gallium nitride (GaN) substrate. The substrate will effectively enhance the performance of green laser and white led.

It is reported that, current manufacturing technology can only make the number of about mm the size of the rectangular GaN substrate. Sumitomo GaN substrate, breaking the bottleneck of this mass production components, even with the current production of GaN substrate face (crystal), compared favorably.