Aixtron launched the new AIX G5+ silicon based gallium nitride (Gan-on-Si) MOCVD device, can handle 5 pieces of 8 inch wafer

For the AIX G5 reactor platform 5x200mm (8 inch) gallium nitride silicon based Gan-on-Si composite semiconductor equipment maker Ace strong German Limited by Share Ltd (Aixtron) launched a new product AIX G5+, 5x200 mm for its AIX G5 planetary reactor platform (8 inch) silicon gallium nitride growth equipment. Based on a customer centered development plan, Ace's strong R & D laboratory developed the technology and designed and manufactured the product, including specially designed reactor hardware and process. The product is now available as part of the AIX G5 series, so all existing G5 systems can be upgraded to this new device. Ace strong has revealed some of the key customers G5+ details.

Silicon based gallium nitride technology is a hot topic for today's MOCVD users and manufacturers. The vice president of Ace's strong market Rainer Dr. Beccard said, "it is the technique of choice for many emerging market in the field of power electronic devices, has a good prospect in manufacturing and high brightness LED products with high performance and low cost in terms of future. Wafer size and materials are critical to the cost effectiveness of the manufacturing process, so the transition to the 200 mm standard silicon wafer will be a reasonable cost advantage for future development. "Ace strongly believes that uniformity and yield are key factors for the success of the 200 mm silicon nitride based process, so we have a dedicated R & D program. "Ace vice president and Power Electronics Project Manager Frank Wischmeyer added," first, we passed through repeated simulation numerical, and design can be compatible with the existing AIX G5 reactor platform, the new basic components of process performance and unique system capable of 5x200 mm process. "The extremely stable process flow that is ultimately achieved provides a more uniform material characterization and higher yield than any other MOCVD platform, as well as a wafer production capacity of 5x200 mm. Initial feedback from customers, but also confirms the great success of this technology development. Many customers in particular, silicon substrate shape, uniform thickness of all 5x200 standard mm wafer is completely symmetrical and strictly controlled wafer curvature, are required to fully comply with their silicon production. Dr Wischmeyer said: "this uniform production capacity, has been Ace strong planetary reactor based technology and the unique advantages, and now can be successfully applied to 200 mm silicon gallium nitride wafer production. "