Belgium uses silicon based gallium nitride to develop high power white LED

Day ago, the Belgian Research Center (IMEC) launched a joint development plan (IIAP:industrial affiliation program), the goal is to reduce the cost of gallium nitride (GaN) technology, using silicon gallium nitride large diameter (GaN-on-Si), and the development of high efficiency, high power white LED, is committed to promoting the development of Gan technology, including power conversion and application of solid-state lighting (SSL).

IMEC GaN project director Marianne Germain said, using silicon chips with large diameter (size from 100mm to 150mm, and then increased to 200mm) is compatible with the CMOS program combined, can create a feasible solution for economic. For solid-state lighting, part of the IIAP program is to use silicon based gallium nitride technology to develop high efficiency, high power white LED. The goals of the program include improving internal and external quantum efficiency and achieving high current operation.

IMEC said III nitrides have excellent luminescent properties, and visible light and ultraviolet spectrum widely. However, if the use of new batch manufacturing technology, the development of optical efficiency of up to 150lm/W LED, then the use of these devices to develop the LED can be widely accepted.

IMEC will also invite integrated device manufacturers and compound semiconductor industry together to join the plan.