CREE announced the upgrade process design kit, using Agilent ADS system, the development of silicon carbide substrate Gan HEMT devices

CREE (Nasdaq: CREE) announced the upgrade of an advanced process design kit (PDK), the PDK based on Advanced Design System Agilent Co (ADS) software, can provide the development of silicon carbide substrate for GaN microwave and wireless RF Design Engineer (GaN-on-SiC) a design and simulation tool for HEMT devices. The PDK combines the latest version of the ADS Agilent Co and CREE Gan silicon carbide substrate processing technical parameters and design rules, to help engineers to shorten the monolithic microwave integrated circuit (MMIC) development time.

CREE wireless radio frequency (RF) and microwave Jim Milligan director said: "the new PDK can help the wireless RF design engineers, by the Agilent Co in 2011 released ADS (electronic design automation tools, a leading industry) to achieve CREE silicon carbide substrate Gan MMIC processing performance. The front end integrated design system can provide high accuracy and can be extended to nonlinear model, parametric layout cell, design rule checking, layout of seamless interoperability and effective design cycle, thus speeding up the listing process of products to customers. "

The Agilent EEsof factory EDA Project Manager Juergen Hartung said: "this paragraph jointly issued the PDK integrated design system of Agilent and CREE joint customers can be obtained at the same time CREE advanced silicon carbide substrate Gan MMIC processing technology, Agilent, and with the advantages of production can be applied to one of the most reliable and high power HEMT devices leading the challenge in the field of application. "

For more information about CREE radio frequency products, please visit: www.cree.com/rf.

About CREE (CREE)

CREE was founded in 1987, is the United States listed companies (1993, NASDAQ: CREE), the leading global manufacturer of famous LED epitaxy, chip, packaging, LED lighting solutions, compound semiconductor materials, power devices and RF integration in the industry and. CREE LED lighting products has the advantage of gallium nitride (GaN) and silicon carbide (SiC) and other aspects of the one and only material technology and advanced light technology, has 1300 U.S. patents, 2900 international patents and nearly 390 patents (including more than China has been authorized in the trial of patent), the CREE LED product is always in the world leading level. CREE lighting class high-power LED, with high light efficiency, color stability, long life and other advantages. CREE to provide customers with high quality, high reliability light-emitting devices, but also to provide customers with complete sets of LED lighting solutions. CREE silicon carbide metal oxide semiconductor field effect transistor switching devices (MOSFET Switch) on resistance temperature coefficient of small, stable, low leakage current, short switching time, and CREE Schottky (Schottky Power silicon power diode Diode) zero reverse recovery current and other characteristics, making CREE SiC power devices is especially suitable for high frequency, high efficiency and high power density and high reliability requirements of power electronic system.