Foxconn new technology to improve the quantum efficiency of LED

Electronics manufacturer Foxconn (Foxconn) developed by nano particle doped layer Limited (confining layer) way, let the indium gallium nitride (InGaN) and aluminum gallium arsenide (AlGaAs) lattice active layer is more smooth and orderly, thereby to improve the light emitting diode (LED) quantum efficiency. The U.S. patent application will challenge the current LED chip factory process technology.

Hon Hai Precision Limited by Share Ltd (Hon Hai Precision Co) with the Group subsidiary Foxconn Nokia, Apple and DELl and other international OEM in. Foxconn is currently one of the world's largest electronics manufacturers, they claim to hydrogenated silicon carbide (hydrogenated SiC) as the substrate material of LED, can effectively improve the heat dissipation problem of LED chips. They filed two patent applications for LED in May 28th.

The company is headquartered in Taiwan, the company applied for two LED patents, including the use of InGaN or AlGaAs as active layer, single quantum wells or multiple quantum wells. The difference between Foxconn's LED and the general LED epitaxial structure is that the former doped nm nanoparticles with a diameter of 20-200 nm in the confined layer on both sides of the active layer. Inventor Chen Jieliang (Ga-Lane Chen) and chief technology officer for Hon Hai, he in the patent application pointed out that nano particles can be doped with silicon nitride (SiN), silicon oxide (SiO) and gallium oxide (GaO), gallium nitride (AlN) or boron nitride (BN), will help improve the LED bare wafer chip quality.

In the patent, nanoparticles can change the lattice constant (lattice constant) of the N type and the P type confined layer, thereby reducing the lattice strain. By decreasing the strain, depositing the active layer on the N type confined layer and depositing the P type confined layer on the active layer can reduce the chance of lattice dislocation (Dislocations) generation. In addition, the decrease of the lattice strain can also reduce the stress between the active layer and the confined layer, thus improving the quantum efficiency.

Hon Hai founded in 2001 Xin Xin semiconductor industry Limited by Share Ltd (Foxsemicon Integrated Technology Inc., FITI), as a specialized R & D and production of TFT-LCD, LED lighting and LED display subsidiary. From 2006 to date, Hon Hai Precision, Pei Xin semiconductor and Foxconn has applied for a number of patents in the United States LED chips.