Global crystal is about to release the latest results of key materials

The crystal (5483) silicon wafer factory's global crystal (6488) today (1) said on April, 13 to 16 will be in the "LEDTAIWAN2016" will be published in the wide bandgap semiconductor element (WideBandgapSemiconductorDevice) key materials of the latest research results, according to the application of power components, respectively, on silicon (Si) gallium nitride (GaN) and silicon carbide (SiC) products.

Global silicon crystal and pointed out that the products will be on display 3 inch to 12 inch wafer, wafer, annealing, including Lei polishing film and SOI; Gan products will be on display 6 inch and 8 inch CrackFreeGaN/Si; and silicon carbide products will display the crystal ball and double polished wafer.

The global crystal said, at present in the silicon wafer products for different application client products, providing ultra flat, high or low resistance and other kinds of demand for products, and suitable for the development of the intensive use of gallium nitride silicon substrate; new material R & D products can significantly improve due to rupture stress caused by warpage, help in the post process users to enhance the yield, while its high stability allows users to feel the process can stimulate wider in scope to accelerate product development.

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