Japan will launch GaN development project in 2016

The Japanese Ministry of Education (hereinafter referred to as "liberal arts") will start called help GaN power components development projects to achieve a new generation of semiconductor research and development of "energy saving society in 2016 year. Relevant person in charge said, this is the province's first electronic component projects". The core strength of the project is the 2014 Nobel prize winner - Professor of Nagoya University led research team led by the. The project for a period of 5 years, the first year (year 2016) budget of 1 billion yen.

Professor Tian Tian in 2014 won the Nobel prize for physics for the invention of blue LED, according to reports, this is an opportunity to set up the project. In the cabinet office and the Ministry of economy is a new generation of power semiconductor research project, "the characteristics of this project is aimed at (power element) use, go back and do the basic research of GaN, explain its principle" (arts province responsible person).

3 areas of research: crystal, device and evaluation

The project has set up three major areas of research, the first is to develop high-quality GaN crystals suitable for power components. This is the core of the project. Will be the Nagoya University as the center, as well as Osaka University and TOYOTA Central Research Institute (TOYOTA Research) and other participants, the project leader is Professor tian.

In this key point, in order to produce high quality GaN crystals with less defects, will consider establishing real-time observation in the process of crystal growth, to understand and control the technical defect mechanism. And also through the new crystal growth simulation to explain the process of crystal growth and control method. The goal is to achieve the "first principles calculation", "thermodynamic analysis", "Numerical Fluid Mechanics" seamless connection between the 3 Analysis of the "multi physics field crystal growth simulation".

Second is the production of power components in the field of power devices and systems". This part of the research was conducted by the TOYOTA Central Research Group GaN semiconductor devices, currently working at the Nagoya University, served as the person in charge of. Japan Hokkaido University, Hosei University and TOYOTA research in.

Third is the evaluation of the first two areas made of crystal and power components of the evaluation of the basic areas". Koide Yasuo, head of the Japan Institute for materials research. , TOYOTA and Fuji motor.

2030 to achieve switching frequency 1MHz above, the output power of more than 100kVA

The project is aimed at practical in 2030, put forward 5 years to reach the research objectives. There are two aspects of the practical goal of 2030. First, the power components with the switching frequency of 1MHz or more, and the output power of more than 100kVA. The main purpose is to realize the "vertical" component of the GaN type semiconductor on the GaN substrate.

Second, the realization of the power components on the integrated control circuit and other peripheral circuits "intelligent power devices". The main idea is realized by the element.

To achieve these goals in 2030, 5 years later to achieve the following objectives.

In the field of crystal, not only to produce high quality crystal, but to make suitable for power elements of the crystal. It is necessary to understand the mechanism of crystal defects, and to develop the method of crystal growth simulation.

In the field of power components, will be aimed at mass production, the development of stable production of the device technology. In the field of evaluation, it is necessary to develop Schottky knot, PN junction and MIS junction and other basic elements of the structure of the electrical evaluation criteria, that is, "to make TEG (Test Element Group) as the goal" (the person in charge of liberal arts).

For more information about LED, please click on LED network or pay attention to WeChat public account (cnledw2013).