Jiang Fengyi: need to solve the silicon substrate to do LED chip several key technologies

Do led gallium nitride on silicon substrate, in accordance with the current efficiency and cost forecast, will be divided into three stages: 2010 will reach 90~100lm/W, the average 1W chip costs about 1 yuan; in 2015 will reach 120~140lm/W, the average 1W chip costs will drop to 1/2 in 2010; by 2020 will reach 160~200lm/W, average 1W the cost of the chip will drop to 1/3 in 2010. At that time, if the use of LED instead of 60W incandescent, chip price of about 1.5 yuan. Of course, there is a premise that the development of the DROOP effect to slow down the light-emitting structure, which is currently any kind of substrate epitaxial Gan LED to solve the common problem.

The power type LED silicon substrate made of white light efficiency is generally 70~80lm/W, production of the chip with 0.2 mm x0.2 mm with green and blue chip, is not found in the development of high efficiency silicon substrate LED bottleneck on physics. From the micro perspective, the dislocation density of TDD epitaxial material class 6 * 108CM -2, the silicon substrate LED in this range; from the macro aspect, the silicon substrate LED stable performance under high current density.

From the current level, the silicon substrate of semiconductor lighting technology needs to overcome several key technologies, including the growth of technology equipment manufacturing technology, 6 inch MOCVD 6 inch epitaxial materials (light emitting structure slow DROOP effect) and 6 inch chip manufacturing technology.