MITSUBISHI chemical manufacturing 20mm * 12mm large M surface GaN backplane

[BP] the Nikkei news agency reported MITSUBISHI chemical produce large size M size is about GaN floor length 20mm * 12mm width, and that the United States held in Las Vegas "ICNS-7" (September 2007 16 ~ 21 days) published (speech serial number: I1). The size of the original product is about 20mm * 5mm wide, this is mainly to increase the short side. The M surface is a non-polar surface, and the substrate can be used to produce LED and semiconductor lasers and other light-emitting elements on the non-polar surface of the GaN crystal. M floor previously developed by the company was used in the study group, and Rom of the Northeastern University and the California University of Santa Barbara (UCSB) GaN element of Professor Nakamura Shuji's research team made.

The nonpolar surface is perpendicular to the polar plane of the C crystal surface of GaN. The blue light emitting element, wireless base station LED and the blue violet semiconductor laser power amplifier circuit, power supply circuit and other industrial equipment such as transistor using GaN semiconductor element (GaN element) are generally produced in the C plane. The performance of GaN devices will be improved theoretically by using the non polar plane. For example, light-emitting devices can improve the luminous efficiency. Currently, the C surface has been able to product 2 feet of the GaN backplane, but the M is not the size of the surface of the floor, so I hope to achieve large-scale m surface GaN.

Start from the C surface growth

MITSUBISHI chemical trial of the m face plate first in the C surface of the vertical direction (c axis direction) by HVPE method to make GaN crystal growth, after, in accordance with the C surface perpendicular to the bottom of the GaN plate to form M surface GaN. The vertical direction of the C surface is the short side direction of the m surface. Using this technique to lengthen the short side of the m face plate needs to increase the thickness of the C surface. The thickness of the C front panel was about 5mm. This product is increased by 12mm.

On the other hand, the long side direction of the m face plate depends on the size of the C face plate. The use of the C surface of the GaN floor diameter of 2 feet, the longest side up to about 50mm. However, in order to prevent the floor warping and taking into account the needs of users, will be reduced to about 20mm. The length of the long side can be changed to a certain extent.