New graphene photodetector, 100 thousand times stronger than the existing equipment detection

Graphene, due to the lack of inherent energy gap, has no place in the field of digital electronics. In the field of optoelectronics, however, the structure of graphene, which has no gap, seems to attract the attention of many researchers. This feature is especially prominent in the field of photodetectors, which makes it possible to produce more efficient detectors.

Recently, South Korea, Daegu Institute of Technology (DGIST) model of graphene photodetector and Swiss researchers at University of Basel have developed a work in the microwave wavelength. This can be seen only from the near infrared to ultraviolet wavelengths, can be seen in the wavelength range of graphene photodetector is very different.

"The significance of this study is that we have developed the world's first microwave detector based on graphene devices," said Zheng Minqiong, a senior researcher at DGIST Min-Kyung, in a press release. "Jung.

The device can detect the energy level of the existing graphene photodetector to be one hundred thousand times smaller than the detection level.

In the study published in "nano letters" (Nano Letter) Journal, microwave absorption capacity of bilayer graphene research team studied the layout in the PN junction in the PN junction is n - type semiconductor type P and connecting the nodes together, it is the basis of many of us are familiar with electronic equipment.

Of course, there have been many previous researchers have done a lot of research and attempt on the microwave range of photoelectric detection, but because the microwave detector itself has the surface potential difference caused by the surrounding environment much less energy, these attempts were unsuccessful. The cause of the failure, including the residue left on the surface of graphene during manufacturing.

In order to overcome this problem, the researchers. They create a bridge structure that allows the p-n to be suspended above the substrate, so that the graphene based p-n junction is separated from the substrate. This bridge structure essentially allows electrons to flow freely without colliding with obstacles on the device.

The researchers can measure the photocurrent by measuring the temperature difference between the electrodes, so as to confirm that they do produce a microwave photodetector. Basically, with the increasing number of electron hole pairs in the graphene p-n junction, the temperature of the p-n junction increases.

The researchers seem to be considering the use of such microwave detectors for wearable devices and flexible displays. Zheng Minyu added: "the development and application of new equipment, such as the use of a single large area microwave detector based on graphene performance, we will carry on the further research to improve the wearable devices and flexible displays. "

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