Osaka University produced the use of GaN semiconductor red LED components

Fujiwara Yasun, a professor of materials science at the Graduate School of engineering, Osaka University, produced a red LED module using GaN semiconductors. The use of GaN semiconductor blue LED components and green LED components have reached a practical level, but the trial of red LED components "or the world's first" (Fujiwara). If it can be the same as the blue LED and green LED components, the use of GaN semiconductor manufacturing Red LED components, can be achieved in the same motherboard 3 primary colors RGB. In this way, it is estimated that it will be helpful to realize the LED display with small pixel size and high precision.

This time, through the use of rare earth elements in the light-emitting layer GaN (EU) (Eu), the realization of the red LED components. Previous studies have also been carried out to add Eu to the GaN to get the red light, but the original ion implantation method was added to Eu, and the red light was obtained by photo excitation (Photoexcitation). While Fujiwara's team used the MOCVD method to add Eu, and through the injection current successfully obtained the red light. This is the first time in the world to use this method to get red laser.

The samples in the driving current is 20mA, the driving voltage is 6V, output power of 1.3 W. Although the optical output power is still small, but as a LED component, if the further optimization of the electrode structure, etc., is expected to greatly improve the optical output power.