Plessey also recruits, ordering Ace strong MOCVD reactor.

Yesterday (19), press releases Plessey announced that the company has purchased Ace strong (AIXTRON) AIX G5+ C organic metal chemical vapor deposition (MOCVD) reactor. Earlier, the company has ordered a reactor from Ace.

Price is committed to using silicon based gallium nitride epitaxial wafers to produce the next generation of Micro LED applications. The Ace strong MOCVD reactor will enhance its manufacturing capability of silicon based Gan epitaxial wafers. The company intends to install the reactor in its manufacturing plant (270 thousand square meters) in Plymouth, England (Plymouth) in the first quarter of 2019, and put it into operation.

The new Ace strong reactor provides an automatic cassette type (C2C) wafer transfer module wafer transfer module with two independent cavity configuration options, enabling automatic loading and removal of 8x6 inch or 5x8 inch silicon based gallium nitride epitaxial wafers in enclosed cartridge environments. The current Ace strong MOCVD reactor can manually load 7x6 inch or 3x8 inch epitaxial wafers.

The automatic cleaning technology of the new reactor can ensure that the equipment is clean during every operation, which helps to reduce wafer defect rate and significantly reduce maintenance downtime. In addition, the new equipment also has faster tilt heating and cooling and higher base unloading temperature, thereby shortening the formulation time.

Price said that the AIX G5+ C reactor can enhance the R & D capability of the monolithic Micro LED based on proprietary silicon based gallium nitride technology. The company's Micro LED has the characteristics of extremely low power consumption, high brightness and ultra high pixel density. It will bring potential impact to the existing application fields such as LCD and OLED.

Price aims to become the global leader lighting developer of the innovative display engine and the full field self luminous Micro LED display. The device combines ultra high density RGB pixel array and high performance complementary metal oxide semiconductor (CMOS) backplane. It has the characteristics of high brightness, low power consumption and high frame rate image source. It can be used in head mounted display and wearable electronic devices of AR/VR system.

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