Proximity exposure apparatus can create a new generation of high brightness LED - 2.5 m produced by suss micro forming pattern

The day before, suss microtec (SUSS MicroTec AG) disclosure, to create a new generation of high brightness LED to about 3 mu m pattern, can use the existing resolution proximity exposure device. By improving the optical system and illumination of the proximity exposure device, and changing the optical mask and so on. By this technology, LED manufacturers are expected to use a new type of high brightness LED development and mass production in the near exposure device, without the need to import the stepper and other expensive projection exposure device.

The company is a MEMS, semiconductor packaging and LED, such as the use of proximity exposure device of large manufacturers. Although not released relevant content, but Tech-On! The interviews showed that large LED vendors, each company has dozens of the estimated ~ 100 Taiwan exposure device of Su swinburne.

A new generation of high brightness LED manufacturing requires about 3 m pattern, in order to improve the efficiency of LED light extraction structure on sapphire and other types of substrates. The structure needs to be periodically formed in the size of 3 to 4 M.

In the past, the proximity exposure device used in the LED structure could not form a pattern of about 3 m. Therefore, the industry generally believe that in the production of a new generation of high brightness LED need to use stepper machine, such as projection exposure device.

In the realization of the resolution of about 3 m exposure technology, in addition to projection exposure, as well as vacuum contact exposure. The utility model relates to a technique for improving the resolution of the utility model, in which the vacuum state is formed between the light cured mould and the bottom plate, so that the distance between the light and the bottom plate is narrower than the proximity exposure. However, the vacuum contact exposure has a low yield issue, it is difficult to be used for mass production.

The formation of 2.5 m square pattern sample. The gap between the mask and the substrate is 100 mu m. Less passivation of edges and corners. By produced by suss micro.

The formation of 5 m below the hexagonal pattern sample. Exposure gap is 40 m. By produced by suss micro.

Suitable for proximity exposure version of SMO

This produced by suss micro disclosure, through three improvements, can be formed by the proximity exposure apparatus 2.5 m patterns: (1) the optimization of additional new micro lens optical system; (2) an additional filter optimization of lighting system; (3) on the photomask using OPC (Optical Proximity Correction: optical proximity correction) technology. (1) and (2) can be achieved by modifying the existing exposure device. By combining these three improvements, the SMO (Source Mask Optimization) is optimized with the optimization method for the entire exposure process of the semiconductor device.

(1) the improvement of optical system is intended to make the illumination characteristics of the light source more stable. The new micro lens array which can reduce the deviation of illumination, can improve the intensity and angle uniformity of illumination light, and can eliminate the bad optical factors that cause the light source to be dislocated and the luminance of the light-emitting surface is uneven.

(2) the improvement of the lighting system is aimed at the high precision control of lighting. The high precision of the illumination light is realized by inserting the filter for illumination.

(3) additional OPC, in order to prevent by the (1) and two (2) were about 3 m patterns of exposure, the possible adverse resolution and poor technology. As with the OPC, which is used for memory and logic LSI, attach an auxiliary pattern below the limit in the photomask pattern.

The company said, alone (1) and (2) two exposure close to about 3 m, prone to form such as light mask pattern on Cr shadow is transferred to the photoresist pattern, angular part of passivation, linewidth confusion, line end defect, and pattern density different region due to the proximity effect in the shape of chaos, etc..