Rensselaer Polytechnic Institute (RPI) demonstration, green LED epitaxial material, this material is very useful for the development of RGB color mixing in red green blue white LED, three LED, the efficiency of deep green LED material is always the lowest. The RPI team demonstrated the green electric 555 nanometer wavelength emitting C axis of polarity growth of gallium nitride LED device, 100A/cm2 power output in 8mW. The results are obtained by reducing the defects in the active region of the LED, including the growth of RPI on different polar and nonpolar Gan substrates.
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