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Scientists in Holland have succeeded in producing a new type of nanoscale superconducting transistor

Kavli nano science and Technology Institute Delft in Holland and Eindhoven in Holland PHILPS Research Institute Co developed the superconducting transistor semiconductor nano InAs line based on.

PHILPS said, this device makes manufacturing new nanoscale superconducting circuits become possible, and at the same time show the research basis of quantum transport phenomena opportunities. The research team will publish the results in the July 8th issue of the journal Science and technology.

Scientists have shown that a combination of indium arsenide semiconductor nanowires and aluminum based superconducting contacts can lead to superconducting transistors can be copied. Although there are a large number of semiconductor materials systems and devices, semiconductor and superconducting materials have been difficult to combine the main reason for the low temperature superconducting requirements.

In Kavli-Philips device, super current from a superconducting contact through the nanowire to another contact. This quantum effect can be described as the "leakage" of the Cooper pair (responsible for the superconductivity of the electron pair) from the superconducting contacts to the semiconductor nanowires". In addition, the current can also be controlled by the gate voltage, making it a super current transistor.

In both studies, nanowires via vapor liquid solid growth process in tiny gold particles. The size of nanoparticles ranged from 10 nm to 100 nm, which set the diameter of the nanowires. The length of the nanowires is directly proportional to the growth time, which is easy to reach tens of microns. The yield of this superconducting device is high enough to allow superconducting circuits to contain several Kavli-Philips nanowire devices.

PHILPS recommends that two nanowire devices can be used to build electrically tunable superconducting quantum interface devices (SQUID). The second possibility is to create a nanowire light emitting diode.

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