Silicon substrate LED technology won the National Technology Invention Award

In January 8th, the national science and Technology Awards Conference held in Beijing Great Hall of the people, by the Nanchang University, latticepower (Jiangxi) Co., Ltd. in crystal and energy-efficient lighting Co. Ltd to complete the "silicon substrate of high light efficiency of GaN based blue light emitting diode project" won the first prize of national technological invention. The main project is completed including the crystal can photoelectric Professor co-founder and vice president of Nanchang University, Dr. Jiang, vice president of Sun crystal can photoelectric money, latticepower co-founder, CEO and latticelighting founder Dr. Wang Min et al.

In the field of semiconductor lighting, there are three LED technical routes, namely sapphire substrate, silicon carbide substrate and silicon substrate LED technical route. Among them, the two routes are mainly developed in Japan and the United States, the three main inventor sapphire technology won the 2014 Nobel prize in physics; the silicon carbide substrate LED technology won the 2003 Presidential Award for technological invention.

According to reports, the National Technology Invention Award criteria: is the first at home and abroad of the major technological invention or innovation, technical and economic indicators have reached similar technology leading level, and promote technological progress in related fields and has produced significant economic or social benefits.

Silicon substrate LED technology from the birth of Nanchang University, crystal energy photoelectric investment continued research and development and industrialization, and crystal and lighting and many other enterprise applications, from the laboratory to the market. The silicon substrate LED project stand out as the only national invention award in 2015, which is the national level of technology innovation and application of a high degree of recognition.

Silicon substrate has good thermal conductivity, and has the advantages of low cost of raw materials, large wafer size and so on. The preparation of GaN based LED on silicon substrate has been the industry's dream. However, due to epitaxial film cracking, silicon and gallium nitride crystal quality of the two materials large lattice and thermal mismatch leads to the poor, and the substrate opaque lead low light efficiency is not solved for a long time, the industry generally believe that prepared on silicon substrate with high efficiency gallium nitride based LED is not possible.

One of the main project -- Professor Jiang

The research team led by Professor Jiang to overcome these difficult problem in the world, the silicon substrate LED technology has the original intellectual property developed in the laboratory of Nanchang University. 2006, the technology to obtain the A round of well-known venture capital investment, such as the Jinsha River, by Professor Wang Min and Dr. Li Yi co founded crystal photoelectric, focusing on the industrialization of silicon substrate LED technology.

After ten years of hard, and then gradually acquired Singapore Temasek led B round of financing, international financial company (IFC) led C round of financing as well as the Asia Pacific Resources led D round of financing support; and in the Jinsha River and other investors to work together, struggle together to introduce Dr. Zhao Hanmin, Dr. sun Qian and many other elite returnees. Latticepower rate before the global successful implementation of large-scale industrialization of LED technology on silicon substrate.

In August 2014 the United States Department of energy "research and development of solid state lighting manufacturing (Manufacturing Roadmap:Solid-State Lighting Research and for Development)" the report said: "latticepower is the earliest practitioner of LED technology on silicon substrate, and the mass production of the silicon substrate Gan LED chip in June 2012". This is an international leader in crystal silicon photovoltaic technology and industrialization in the silicon substrate LED lead.

As the world leader in silicon substrate LED technology, crystal Optoelectronics in a short span of ten years to develop a laboratory technology into the world's third Blu ray LED technology route to complete the global silicon substrate LED patent layout. Currently, the project has been applied for more than 330 patents, patents have been authorized in the 147, which authorized international patents of 47. These patents will be the cornerstone of the construction of China's LED industry intellectual property pool, and will have a significant impact on China's LED industry structure and industrial security.

According to Dr. Sun crystal can photoelectric money, silicon substrate LED technology still has a huge space for development, is expected to get large size wafer, integrated circuit to 6 inch and 8 inch equipment and mature production line organization and management experience of large-scale automated manufacturing, so as to improve the production efficiency, the comprehensive cost of LED products to further reduce, or it will affect the global LED industry, change the pattern of competition.

Professor Jiang further prospects: "lighting technology route based on LED plus blue fluorescent powder, is just a transitional scheme. We are working hard to study the silicon substrate yellow, green LED technology, will make the LED lighting technology without the need to become a reality. "

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