Tugunaxin: Florian photoelectric materials launched a low dielectric constant, low CTE, transparent nano UV glue

Optoelectronics industry has been committed to continuous innovation and improvement of electronic packaging materials, in order to improve the performance of optoelectronic devices. Florian photoelectric materials (Suzhou) Co. Ltd. successfully developed nanometer UV low dielectric constant and low CET, transparent, the patented product has passed the national computer reliability comprehensive quality supervision and Inspection Center for testing, to achieve a technological innovation and breakthrough.

Based on the composition of polymer materials is currently widely used in bonding or packaging semiconductor devices, electronic devices and optoelectronic devices (such as LCD/OLED display, LED semiconductor light-emitting devices, etc.). Due to the high thermal expansion coefficient (CTE) of the polymer material is significantly higher than that of the substrate material, the failure of the device occurs under the action of thermal stress. Therefore, the industry has been through the use of inorganic fillers to reduce the polymer material composition (often used thermosetting polymer) CTE, while improving the mechanical properties of such composites. The composite material combines the advantages of inorganic filler and organic polymer material, which shows better performance than either of them. However, the use of inorganic fillers, usually made of transparent polymer materials become opaque. The light output rate is very important for optoelectronic devices, and the composites with poor transparency can not be applied to the packaging of optoelectronic devices. In addition, the optimization of packaging materials with excellent performance often requires multiple, at present one or more of the viscosity, transparency, dielectric constant, hardness and flexibility and other important properties among many aspects of packaging materials are insufficient, which will seriously affect the performance of optoelectronic devices. The continuous innovation and performance improvement of electronic packaging materials is a difficult and urgent problem to be solved.

In Jiangsu Province, Suzhou science and technology project supported by Florian photoelectric materials (Suzhou) Co., R & D department through a lot of experiments, successfully developed based on UV curable nano filler. This technology has obtained national patent, and through the comprehensive reliability of national computer quality supervision and Inspection Center for testing, including low temperature storage test, high temperature storage experiment, experiment, and hot temperature cycling test, verify the IC smart card have effect. Compared to the heat curable material, UV curing speed, usually a few seconds to complete curing, greatly improving the production efficiency, has been rapid development in the industrial sector. Florian launched the UV-E0201 is a nano filler of light cured epoxy resin adhesive, in the case of UVA strength of 70-75mW/cm2 can be cured in 60 seconds, to reach the high hardness of Shao D85. UV-E0203 is based on the micro filler products, the filler content and the same UV-E0201. It can be clearly seen from the figure, the use of nano UV-E0201 glue packaging IC smart card is highly transparent, while the use of micro UV-E0203 glue packaging IC smart card is white and transparent. The film thickness is 0.8mm, the UV Vis spectra of UV-vis detection, the results show that: 1) in 450nm, UV-E0201 and UV-E0203 86.4% light transmittance, the light transmittance is only 0.17%; 2) in 400nm, UV-E0201 and UV-E0203 73.24% light transmittance, the light transmittance is only 0.13%. At the same time, the product has very low viscosity, through the use of special nano fillers, can make it in the content of more than 30% of the case, the viscosity at room temperature is only about 750cPs.

Figure 1 IC smart card using UV glue package: left for the use of UV-E0201 nano filler rubber, the use of micro filler UV-E0203 glue.

The CTE (aboveTg) cured by epoxy resin without filler is about 190ppm/K (TheUseofNanosilicainEpoxyResins, PeerapanDittanet, Ph.D.Dissertation, LehighUniversity, 2008). By using the composite technique, CTE was successfully reduced to 142ppm/K (TMA, inatemperaturerangeof+30to+150? C) after curing UV of alicyclic epoxy resin by. The CTE of UV-E0201 was further reduced to 128ppm/K (see Table 1) by the use of specially prepared nano fillers. Europe and the United States a leading technology company similar products D46XX CTE is 150ppm/K. The nano UV-E0201 has passed the comprehensive reliability test of the national electronic computer quality supervision and inspection center.

In the product development process, the researchers accidentally found that UV-E0201 has a dielectric constant of ultra low dielectric constant of nano UV-E0201 adhesive after curing for 2.4, and micron UV-E0203 gum was 2.9, compared with Europe's 3.1 products. Low dielectric constant material low-k is always the key technology in the manufacture of semiconductor and optoelectronic devices. In the integrated circuit, due to the existence of ILD (InterLayerDielectrics, interlayer dielectric), the distributed capacitance is inevitable. Distributed capacitance not only affects the speed of the chip, but also poses a serious threat to the reliability of the chip. Using low-k as the dielectric ILD, can effectively reduce the distributed capacitance of interconnect, thereby enhance the overall performance of the chip is above 10% (DecreasedRCDelay, LowerPowerConsumption, andReducedCrosstalkNoise). IC manufacturing guide, the IC90nmnode low-k index is 3.1-3.4, 45nmnode is 2.5-2.8, and 32nm is 2.1-2.4 (refer to ITRS32nmnoderoadmap). The dielectric constant of epoxy resin is about 2.8-4.2 (characterization, andapplication, CRCPress, Expandingmonomers:Synthesis, 1992, R.K.Sadhir, R.M.Luck, pg256), and the silicon dioxide is above ~3.9. By using a combination of these materials, the lower dielectric constant of 2.4 was obtained, which was unexpected. At present, Florian is to further clarify the mechanism and explore the application in different fields. With this