Zhongke semiconductor received the first national comprehensive evaluation of lighting engineering

In the country bear the high power LED chip packaging and application unit of the first node comprehensive performance appraisal, the Institute of semiconductors Zhongke Jiaying Semiconductor Co. Ltd., Peking University as the key technology breakthrough made the first. The breakthrough in key technologies is achieved in the national knowledge innovation project support. Semiconductor lighting is one of the high technology sector in twenty-first Century the most promising, with the development of semiconductor lighting applications, "power type high brightness light-emitting diode package and industrialization of key technologies" will play a key role in the production and application of downstream products of the development of chip technology, research. The national Ministry of science and technology in June 2003 officially launched the "national semiconductor lighting project", in October of the same year, the Ministry of science and Technology launched an emergency "fifteen" national key scientific and technological plans to deploy, "technology development" semiconductor lighting industry projects launched immediately. National LED technology in the field of more than 40 scientific research units and enterprises to tackle this project. Semiconductor Institute of semiconductors, Semiconductor Co., Ltd., Peking University, bear the power of high brightness light-emitting diode and packaging industry key technology.

Issued at the end of September 2004 after the evaluation task, it is "eleven" during the holidays, researchers give up vacations, work overtime, and make unremitting efforts and research, the key technology to achieve a breakthrough: the flip chip structure of gallium nitride (GaN) blue LED test results: forward current 350 Ma, voltage 3.6 to 3.8 volts. The optical power of 119.88 MW, the peak wavelength of 460 nm; large flip chip structure of gallium nitride (GaN) white LED test results: forward current 350 Ma, voltage 3.6 to 3.8 volts, the optical power of 79.51 MW, the luminous flux of 25.66 lumens per watt. The optical efficiency of 19.29 LM / W. In October 31st, lasted nearly a month of the site inspection, dynamic process, standardized testing, packaging and appraisal, through assessment expert group defense and ranking the first node, comprehensive assessment in the national rankings bear the high power LED chip packaging and application unit, semiconductor Zhongke Jiaying Semiconductor Co. Ltd., Peking University won the first place.

All the years engaged in compound semiconductor materials and ultrathin epitaxial growth on the semiconductor Chinese Academy of Sciences, has made a number of achievements. In 1997, the first in the country has developed more than 1CD AlGaInP orange ultra-high brightness LED on blue LED chip in the domestic leading position, characteristics of power LED chips have very in-depth research, provide strong technical guarantee for the research of power type high brightness light-emitting diode and packaging industry the key technology ".