8 major trends of LED technology +23 new material technology development

Abstract: in recent years, the semiconductor lighting industry in China has made a breakthrough in the production, output value and technical indicators. 2014, China's semiconductor lighting source, lamp output value of 95 billion yuan, an increase of

43.9%. Among them, LED lighting products exports $9 billion, an increase of 50%, LED lighting penetration rate of 20%. In the first half of 2015, LED lighting products grew by about 23%

Right, 1 ~ May exports of $4 billion 80 million, with the same period last year.

In recent years, the semiconductor lighting industry in China has made a breakthrough in the production, output value and technical indicators. 2014, China's semiconductor lighting source, lamp output value of 95 billion yuan, an increase of

43.9%. Among them, LED lighting products exports $9 billion, an increase of 50%, LED lighting penetration rate of 20%. In the first half of 2015, LED lighting products grew by about 23%

Right, 1 ~ May exports of $4 billion 80 million, with the same period last year.

From the latest developments in global semiconductor lighting, the global LED device luminous efficiency laboratory level

Has more than 300lm/w, the level of industrialization reached more than 150lm/w, LED lighting efficiency of the laboratory level of 200lm/w. U.S. SSL plan to adjust the device to achieve the level of light efficiency industrialization

250lm/w, LED lighting efficiency level of industrialization reached 200lm/w. In short, there is a big gap between the theoretical value and the target value of LED lighting products, such as the permeability, light efficiency, and so on

Broken.

LED lighting technology presents eight trends

LED lighting technology involves a wide range of multidisciplinary technology and modern information technology, the development of eight major technical trends.

The first is to improve the efficiency of the whole LED lighting lamp: LED the whole lamp energy efficiency is composed of six parts: internal quantum efficiency, chip light efficiency, packaging efficiency, phosphor excitation efficiency, lamp efficiency and power efficiency. In certain

The theoretical value of the boundary conditions is 58%, the current good lighting efficiency is only more than 30%, there is a lot of room for improvement, these six are to reach more than 90%, the need for technical breakthroughs.

Two is to improve the quality of the LED light source color and color rendering of the value: to improve the quality of the light source of the LED light source, to use RGB multi spectral combination, that is, the combination of multi chip or multi color phosphor combination, to achieve a reasonable LED

Spectral distribution of SPD, but also to control the main optical parameters, such as color tolerances, glare, such as optical scintillation. The characterization of the color rendering of LED light source is a controversial topic for a long time, and the LED light source can realize the flexible combination of multi spectrum,

The color rendering of any kind of parameters is defective, and the final characterization may be in the form of spectrum. Some experts have proposed the use of color gamut index (GAT) and CRI together to characterize the color of light reduction.

Three is the innovative technology LED lighting: LED light source, lamps at present is the priority among priorities of the LED lighting industry, to speed up the lamp and control function of the technical innovation, in particular, the size of the creative lamp appearance shape flexible, light, light and flexible regulation according to the need change, installation position at.

Four is to carry out the development and application of intelligent lighting: intelligent lighting technology features include open, distributed, remote control telemetry, compatibility, interactivity, etc., is the depth of lighting technology and information technology integration. Technically involved

And a wide range, the key technology is the interface between the light emitting module and the drive power integration, etc., there is an urgent need to have a unified basic standards, according to the actual needs of research and development and application.

Five is to expand the LED lighting applications: to promote the application of non visual lighting systems, such as health care, ecological agriculture, LED visible light communication and infrared LED and UV LED applications, this content rich

Rich, application technology is developing rapidly. LED display application technology focus on the development of high-definition small screen and high-definition display technology, high-definition LED TV and high-definition folding, wearable display device.

The six is the study of narrow spectrum of LED devices: the combination of LED spectra of single LED flexible narrow spectrum, can achieve greater color gamut space in LED display, is a large field of applications, to achieve a narrow spectrum of LED devices to achieve a breakthrough in materials technology extension.

Seven is the white LED devices will gradually shift the RGB combination: with higher luminous efficiency white RGB combination theory, and convenient lamp dimming, color, tone color, technology to focus on improving the green LED light effect, RGB may become the mainstream general lighting.

Eight is the natural lighting will be the ultimate goal: with the development of LED multi spectrum lighting, people will pay more attention to energy conservation and ecological and health lighting lighting, using similar solar lighting will be the best choice, namely, natural lighting, the use of LED technology can be achieved, but to solve many technical problems.

LED lighting technology has great room for development, but also need to further improve the efficiency of the whole lamp and light quality. Actively promote the lighting innovation at the same time in the application, to expand the application fields, such as intelligent lighting and non lighting and visual HD display; in technology to achieve the ultimate goal, namely, natural lighting, lighting energy saving, healthy and comfortable environment for people.

Development trend of new luminescent materials

At the present stage, the technical development trends of the three kinds of nanometer luminescent materials may be the light source of the future.

Quantum dot luminescence

In recent years, the development of quantum dot luminescence technology is a new technology in the field of luminescence.

Quantum dot LED: quantum dots (QD) are fabricated by nano technology, QD particles in the general 2nm ~ 12NM, the quantum dot light-emitting body from the light-emitting core, semiconductor shell, organic ligand composition, such as luminous core

CdSe (cadmium selenide) QD particles, the advantages are: can emit visible light to infrared, stable luminescence, the internal quantum efficiency of up to 90%, combined with LED to produce a rich color, very bright warm white light.

3D print QD-LED: Princeton University for the first time to display 3D printing quantum dot LED, the bottom is composed of nano silver particles, the top is two polymers for indium gallium, quantum dots are nano cadmium selenide particles, outside

After the connection of the upper and the lower electrodes is connected with the upper and the lower electrodes, the CdSe nanoparticles emit different visible light, and the QD-LED is printed on a device with a curved surface, such as a contact lens. The technology will be expanded to 3D print its

His active devices, such as MEMS, transistors, solar cells, etc.. Once the industry will be disruptive innovation technology.

Ultraviolet (UV) QD-LED: QD is being developed at Madonna University, whose electron holes penetrate through the tunnel (the phenomenon of the electron penetration barrier), which is not a traditional drift diffusion. UV (UV) LED, made great progress, a detailed report.

Quantum dots mixed LED: Japan Hiroshima University study of quantum point hybrid inorganic / organic light emitting diode, can emit white light, blue light, 6V power supply, the effective amount of light from 78% silicon quantum dots, improve the output power density of 350 times. The new LED under normal temperature and pressure through the solution process, known as a new revolution in the lighting system.

Quantum dots excited electric blue LED: University of Taitung and the Far East University Cooperative Research on colloidal quantum dots of cadmium sulfide and zinc sulfide to produce electric excitation blue diode, made with inorganic materials like organic high reliability, the application can replace the OLED on a flat plate.

Quantum dot backlighting Technology: embedded in the back of the quantum dot, the use of embedded quantum dots optical thin film (QDEF) applied to the LCD backlight, quantum dots in the blue light LED backlight, red light, green light

RGB white. Improve the luminous efficiency of LED, enhance the color saturation of the LCD, will enhance the color gamut of 30% LCD, but also increase the backlight brightness, reduce energy consumption, and has been industrialized. This color TV production is expected in 2015

1 million 300 thousand units, up to 18 million 700 thousand units in 2018.

The second generation of quantum dot display technology: Zhejiang University, the two research team to develop the quantum dots into solution, with crystal

The dual properties of the body and the solution, the principle of slowing the pace of electronics, so that the effective combination of electrons and holes, greatly enhance the efficiency of quantum dot LED, performance and stability, luminous quantum efficiency up to

100%, RGB colorful. Breakthrough in display and lighting applications.

Graphene light-emitting Technology: graphene is found to be a new breakthrough, in addition to the growth of graphene on the substrate of the third generation semiconductor.

Graphene light-emitting bulbs: Columbia University and the University of Seoul and other units to cooperate in the study, graphene micro filaments attached to the metal electrode, on both sides of the SiO2, hanging on the silicon substrate. Through current heating to over

2500 DEG C, thus giving a bright light, the temperature of graphene will not be transferred to the substrate. The emission spectrum can be adjusted by using the interference between the light emitting filament and the silicon substrate, which is known as the world's thinnest light bulb and can be applied to the luminous flux

The letter. The technology such as industrialization will be disruptive innovation in the field of lighting.

Graphene LED: Tsinghua University recently released by two kinds of graphene, namely graphene oxide (GO) and reduced graphene (rGO) mixture of LED, with the applied voltage changes, can change the wavelength of light, the two interface has a series of discrete levels, can be used in luminescence, sensor, flexible on display.

SiC+ +GaN: SiC in graphene films on silicon wafer and vaporization, graphene film left safely transferred to the silicon substrate, the graphene substrate by direct van der Waals epitaxy growth, high quality

Single crystal GaN thin film, will greatly reduce the cost of semiconductor components. IBM recently claimed that these technologies have mastered, will invest $5 over the next 3 billion years, the development of high frequency transistors on the graphene substrate, optical detection

Sensors, biosensors, and post Si era components, first of all significantly reduce the cost of GaN Blu ray.

Glass substrate + graphene + sputtering GaN: University of Tokyo rattan net

The research team published graphene multilayer films on glass substrates, and formed GaN (AlN+n-GaN+GaN and InGaN multilayer quantum wells) on the film by pulse sputtering (PSD)

MQWs+P-GaN). Its advantages: the growth of GaN quality greatly improved, can produce RGB combination of three primary colors LED, significantly reduce costs. GaN can also be made of high mobility transistor

(HEMT), if the technical route of industrialization, will be disruptive innovation.

Si+ graphene + MBE GaN: Spain

Graphenea company announced that with Ritsumeikan University, MIT, Seoul University, Dongguk University by ordinary chemical vapor deposition (CVD) formation of graphene on copper foil, direct transfer

The GaN crystal was grown on the silicon substrate by RF plasma assisted molecular beam epitaxy (RF-MBE), and the hexagonal symmetry was grown along the C axis, which was formed on the surface of Si (100)

Long GaN crystal to achieve the highest quality.

Growth of high quality GaN technology of the three kinds of graphene substrates are not using MOCVD devices, the growth of high efficiency, low cost, high quality, in addition, can be applied to laser light, the development of the third generation wide bandgap semiconductor, it would be disruptive innovation technology.

Nano luminescence technology

The structure of the nano luminescence is various, and several typical luminescent structures are introduced here.

Nano linear LED: Bohr Institute of nano linear LED, the nanowire core is GaN material, long