A deep UV LED with wavelength of 325 ~ 350nm was developed by the same electron

With the same ELectronics (DOWA) announced that the development of a luminous wavelength of 325 ~ 350nm deep UV LED. Compared with the current ultraviolet light emission wavelength of the market, the output power of the highest level in the wavelength range of LED is achieved. The AIN layer template with high temperature epitaxy on sapphire substrate was used, and the ultraviolet LED epitaxial growth technique was introduced by using the Center Artaud Alto (Palo Research). With the technology of producing high quality AIN template with the electronics, the company said that the use of AIN template as a buffer layer, can effectively reduce the growth of gallium nitride (GaN) material deformation. Currently, the company is being carried out in order to achieve deep UV LED production test. Strive to start the sample supply in 2008.

Source: Nikkei BP