A new technology that can make LED more effective

According to the sify.com website, LED LED lighting mainly depends on GaN films. North Carolina State University has discovered a new technology that will reduce the number of defects in the film by 2~3 orders of magnitude. Salah Bedair professor pointed out that this will improve the quality of light emitting materials so that the same input power to produce the output energy of 2 times, for low power input and UV emission range LED, this growth is very considerable.

Professor Bedair and Professor Nadia El-Masry experiment is to embed the thickness of 2 microns thick GaN film into a space of a length of 2 microns wide, a space of 0.5 microns. The researchers found in the experimental image, many defects will be attracted and trapped in these spaces. This reduces the number of defects in the void space. Therefore, they effectively prevent the defect from spreading to the rest of the film after placing some void space in the film.

Without this gap technology, GaN films per square centimeter would have about 1010 defects. With this technique, however, the defect per square centimeter will be reduced to about 107. Professor Bedair said, "although this technology will add an additional manufacturing step, but it will produce a higher quality, more efficient light-emitting diodes. "