A new technology to improve the quality of LED luminescent materials

Days before the foreign media reports, the State University of North Carolina found a 2~3 by reducing the magnitude of GaN thin film defects, new technology to improve the quality of the light-emitting material led.

The researchers, through this technology, the same input power can produce 2 times the output light energy, for low power input and ultraviolet light range of LED, this growth is very impressive.

The light emitting diode LED lighting mainly depends on GaN films, researchers will be embedded in half the thickness of 2 microns thick GaN film to 2 microns wide and 0.5 microns after clearance, found that many defects will be attracted and trapped in the void space in the. This reduces the number of defects in the void space. Therefore, they effectively prevent the defect from spreading to the rest of the film after placing some void space in the film. Without this gap technology, GaN films per square centimeter would have about 1010 defects. With this technique, however, the defect per square centimeter will be reduced to about 107. In order to produce a higher quality, more effective light-emitting diode.