AIXTRON Planetary reaction chamber technology reduces the cost of SiCED epitaxial production

In November 13, 2007, AIXTRON announced that SiCED ELectronics Development 10x100 mm power electronics Limited by Share Ltd production by AIX 2800G4 HT MOCVD (4 inches) and the future of 6x150 mm (6 inch) SiC wafer. SiCED pointed out that the production technology of SiC material in power electronic devices has matured, the company is now preparing for the future. With AIX 2800G4 system, SiCED's 100mmSiC chip production capacity will be significantly improved. Due to the high yield of AIXTRON epitaxial production equipment can increase the output of 150mm wafers, which is prepared for the larger diameter SiCED wafer transfer.

(http://www.aixtron.com/index.php? Id=312&L=1&tx_ttnews[tt_news]=812&tx_ttnews[backPid]=178&cHash=6e25e11da2)

Source: China Semiconductor Lighting Network