Amorphous glass substrate GaN LEDs come out

Recently, Samsung Advanced Institute of technology and Seoul University announced the development of the first amorphous glass substrate manufacturing light emitting diode.

As everyone knows, compared to the GaN based growth in the sapphire wafer of light-emitting diode (GaN LEDs), manufacturers are more willing to choose to improve the light emitting diode silicon substrate Gan (GaN-on-Si-based LEDs) technology, because the sapphire wafer LED is expensive, and is not suitable for large size wafer level array.

But the study by Samsung Advanced Institute of technology and Seoul University found that Gan amorphous glass substrates of light emitting diode (GaN LEDs) not only lower manufacturing cost, scalability is stronger in large size LED wafer level package, and the transparency of glass substrate, can also be used for photoelectric emission equipment.

According to the research shows that the control of five growth stages of InGaN/GaN multiple quantum wells MOCVD growth is the key to understand the light-emitting layer in the LED array in Pyramid in the film is a kind of titanium due to its layer, similar to Gan hexagonal crystal structure.

Following the first directional layer and the low temperature the initial GaN layer (LT- GaN) after a hole pattern is silicon dioxide (SiO2), to further clarify the use of nuclear radiation in the epitaxial process into layer growth stage.

After Pyramid polymerization and indium tin oxide (ITO) electrode end layer, LED lighting device will send Pyramid brightness in the range of 448-478 nm between 600 cd/m2.