Application of star arc plasma technology in LED manufacturing process

LED can directly convert electrical energy into visible light emitting devices, it has small volume, low power consumption, long service life, high luminous efficiency, high brightness and low heat, environmental protection, durable and strong controllability and many other advantages, the rapid development, high brightness, high performance products available now mass production of the visible spectrum section of various colors. In recent years, LED is widely used in a large area of graphic display, state indication, logo lighting, signal display, automobile combination taillights and car lighting, etc., as the new light source in twenty-first Century. However, there are many problems need to be solved in the process of chip making, glue removing and encapsulation. Plasma technology is an effective way to solve the problem.

The application of stararc reactive ion etching technology in chip manufacturing process

Generally, dry etching can be divided into three categories: sputtering etching, plasma etching and reactive ion etching. The characteristic of sputtering etching is physical effect, which has good directivity, but the selectivity is poor. Plasma etching is characterized by chemical action, and the process is anisotropic.

Reactive sputtering (RIE) is the combination of physical sputtering etching and plasma etching. The mechanism of reactive ion etching is RF sputtering etching process with reactive gas or incorporation of reactive gas in an inert gas, and etching both ion bombardment and chemical reaction, so fast, good selectivity and direction are good.

It has been widely used in many fields, such as polycrystalline silicon, silicon, two silicon oxide, silicon nitride, photoresist, metal and metal silicide. According to the requirement of different etching materials, different working gases are used for etching.

Stararc Star-RIE reactive ion etching equipment by reactive ion etching technology and multilayer etching technology, in ensuring the etching uniformity reached the basic below 10%, greatly increasing the production capacity (furnace processing 2 inch chip 150-200pcs). At the same time, Star-RIE equipment adopts high power RF power supply (0-1000W), and the feedback coefficient can be controlled below 0.1%, improve production efficiency.

Application of star arc plasma cleaning technology in LED packaging process

In the LED industry chain, the upper reaches of the substrate chip production, the middle reaches of the chip design and manufacturing production, packaging and testing downstream. LED packaging technology LED directly affects the rate of finished products, and the problem of 99% sources of particulate pollutants, in the chip and the substrate oxide and epoxy resin and other pollutants appear in the package process, how to remove these pollutants has been a concern, plasma cleaning provides a solution to economic and effective environmental pollution as cleaning technology recently developed in recent years for these problems.

The plasma state in high vacuum equipment, under the action of the power supply, the Ar reaction gas into highly reactive or high energy ions, then the formation of volatile substances and organic pollutants and particulate pollutant reaction or collision, and then by the gas flow and the vacuum pump will clear out these volatile substances, so as to achieve clean surface activation the purpose of. Its biggest advantage is that no waste liquid after cleaning, the biggest feature is the metal, semiconductor, oxide and most polymer materials can be handled well, can achieve the overall and local and complex structure of cleaning.

Ar+e-, Ar++2e- Ar++, contamination of volatile contamination

The surface of the workpiece to be cleaned on the negative electrode by Ar+ bombardment is generally used to remove oxides, epoxy resins, or particulate contaminants, while surface energy is activated.

Star arc Star-RIE and ion beam plasma cleaning equipment can be used in this field. Ion beam plasma cleaning equipment adopts the anode layer ion beam technology, the working voltage can reach 2000V. Under the action of the electromagnetic field, the Ar gas is highly ionized, and the chip and the substrate are bombarded.