Bridgelux and Toshiba jointly develop world-class performance 8 inch gallium nitride on silicon LED products

BridgELux LED lighting technology and solutions for R & D and manufacturing leader, as well as the global leading semiconductor manufacturer Toshiba company, today announced the successful development of the industry's highest level of the 8 inch Gan on silicon (GaN on Silicon) LED chip, using 350mA current, voltage less than 3.1V, only the size of the 1.1mm chip LED, brightness up to 614mW. Bridgelux and Toshiba in just a few months ago this year signed a cooperation agreement, then the two sides will further accelerate the development of LED chip steps to cope with the global panel on LCD lighting system and the increasing demand.

Toshiba also conducted equity investment in Bridgelux, in order to jointly pursue solid-state lighting (Solid State Lighting, SSL) in the field of technological innovation; the development of this investment will further promote the two companies in the field of solid state lighting, and with Toshiba advanced silicon processing and manufacturing technology development ability as the basis, to accelerate the research and development of Bridgelux Gan LED on silicon chip technology.

Bridgelux CEO Bill Watkins said: "Toshiba and Bridgelux work together to develop long-term equity investment and technology, will enable the two companies formed a strategic relationship more closely, in order to achieve the common goal of reducing solid state lighting solutions cost lighting market. "

Toshiba vice president and executive vice president of semiconductor and storage device products Makoto Hideshima said: "we are very pleased to be able to develop activities with Bridgelux, to achieve the industry's best performance of the 8 inch Gan on silicon LED. We will continue to pursue the most advanced technology, the goal of further commercialization of technology. "