CREE commercial radio frequency (RF) power transistors and high power monolithic microwave integrated circuit (MMIC) amplifier shipments have exceeded 10 MW

CREE (Nasdaq: CREE) days ago announced that as of 2011 years and 4 months, radio frequency (RF) the company's commercial business department Gan silicon carbide substrate has been shipped (GaN-on-SiC) RF power transistor and MMIC products RF total output power has exceeded 10 mw. The results shows that milepost type excellent performance of CREE HEMT and MMIC Gan Gan technology has high reliability, compatibility and industry proven. This 10 MW includes only the commercial RF products, does not contain MMIC Gan foundry business 1.5 MW shipments. In the realization of milepost type shipments at the same time, CREE also maintained every 1 billion hours less than 10 times of the device. Ultra low failure rate (FIT rate), the other than RF power transistor technology standard meter failure rate (FIT rate low) 80%. CREE wireless radio frequency (RF) director Jim Milligan said: "our total silicon carbide substrate Gan field work time has been more than 14 billion hours, the reliability of high voltage silicon or gallium arsenide technology than other technology, is the largest value so far accumulated field domestic gallium nitride device suppliers known in the data, which includes not only discrete transistor, also contains a complex multi-stage Gan MMIC. Shipments of this type of milepost 10 MW fully proved CREE Gan technology has been rapidly adopted widely, including not only relates to the field of military applications, including broadband, telecom base station test equipment, civilian radar and medical applications. If we continue at the current rate to these new segments of the market expansion, by the end of 2011 our shipments are expected to 10 megawatts of based on double again. "As America's largest RF Gan silicon carbide substrate wafer processing technology manufacturers, CREE has produced abundant comprehensive development of GaN HEMT and MMIC Gan products, designed to meet the RF array and microwave applications increasing number of wide band, high efficiency and high reliability requirements. 25 years, CREE will continue to creativity and breakthrough innovations to the semiconductor industry, from the earliest to the Blu ray led, the world's first silicon carbide MOSFET, and then to the industry's first silicon carbide substrate Gan MMIC come out, CREE has been fighting in the forefront of technology. About CREE (CREE) CREE was founded in 1987, is the United States listed companies (1993, NASDAQ: CREE), leading to the world famous manufacturer of compound semiconductor materials, epitaxy, chip, packaging and LED lighting solutions and industry as a whole. CREE LED lighting products the advantages of gallium nitride (GaN) and silicon carbide (SiC) and other aspects of the one and only material technology and advanced white light, with 1, 100 U.S. patents and 2 international patents, 800, making CREE LED products has always been in the world leading level. CREE lighting class high-power LED, with high light efficiency, color stability, long life and other advantages. CREE to provide customers with high quality, high reliability light-emitting devices, but also to provide customers with complete sets of LED lighting solutions.