CREE extended product categories, the introduction of low base dislocation 4H silicon carbide epitaxial wafer

LED market leader CREE (Nasdaq: CREE) recently announced the launch of its latest low basal dislocation (LBPD) 100 mm 4H silicon epitaxial wafer. The total basal surface dislocation density of the low level dislocation material is less than 1 cm-2, and the surface dislocation capacity of the Vf offset is less than 0.1 cm-2. The introduction of a new type of low base level dislocation material further reflects the CREE's long-term investment in silicon carbide materials technology and innovation. CREE power devices and RF (RF) and chief technology officer John Palmour said: "SiC bipolar (Bipolar) attenuation devices development has long been subject to the basal dislocation caused by forward voltage. It can be used in high voltage bipolar devices such as insulated gate bipolar transistor (IGBT) and GTO, and increase the stability of these devices. The latest results will help to eliminate the obstacles to the commercialization of hysteresis high power devices. "Silicon carbide is a semiconductor material with high performance, is widely used in lighting, power devices and communication devices in the production of products, including the two luminescence tube (LED), power converter and wireless communication with the RF power transistors etc.. Low basal dislocation epitaxial wafer can now start to order, if you want to know more about the application and product details, please Materials_Sales@cree.com.