Chinese Academy of sciences knowledge innovation project important direction of the project, gallium nitride based laser acceptance

Chinese Academy of sciences knowledge innovation project, an important direction of the project gallium nitride based laser (KGCX2-SW-115) in November 26, 2007 by experts. Acceptance of the expert group listened to the project leader Yang Hui researcher made a summary of the report, as well as the project's test report and the audit report of financial expenses, and watched the live demonstration.

A gallium nitride based semiconductor materials is the new generation of semiconductor material silicon and GaAs based materials, known as the third generation semiconductor material, which has wide bandgap, excellent physical and chemical properties, has extensive application prospect and the research value in the field of optoelectronics. GaN based lasers with a gallium nitride based semiconductor materials developed has important application value in the field of national security field and optical information storage, full color laser display, laser printing, atmospheric environment detection, underwater communication, two-color laser detection etc..

In April 2005, the task of "GaN based semiconductor laser (KGCX2-SW-115)" research project, after more than two years of research innovation, the core technology to achieve a breakthrough in GaN based lasers, the Group believes that the project, in the growth of GaN based laser devices technology and test technology, overcome a series of technical problems on time complete the research objectives and tasks under the book. GaN material background electron concentration is less than 5 * 1016/ cubic centimeter, room temperature stability in the electron mobility of 900 cm2 / V-s above, reached the international advanced level, P type GaN hole concentration is 5 * 1017/ cubic centimeter, the resistivity is less than 1 ohm cm. For the first time in China, the successful development of nitride based laser at room temperature, width and length are respectively 2.5 and 800 micron, 410 nm laser wavelength, threshold current of 110 Ma, the threshold current density of 5.5kA/ cm, at 150 mA, working current, the output power of 9.6 MW, the solid foundation for the development of practical play laser.

During the research period, the company has 5 national invention patents with independent intellectual property rights in the aspects of laser structure design, material growth and device fabrication, and the related articles published in domestic and international journals are 11. Through the research of the project, a group of high level optoelectronic materials and devices have been developed. Researchers will strive through 3 years of research, to study the success of the practical application of the 405 nm laser and a 450 nm blue-green laser, so that it plays a significant role in the national economy and the country's major needs.

Source: Institute of semiconductors, Chinese Academy of Sciences