IMEC released 200 mm CMOS silicon substrate wafer production technology

IMEC (European Interuniversity MicroELectronics Microelectronics Research Center Centre) recently released its latest silicon wafer. In a project called IIAP (GaN Industry Alliance), IMEC and its partners have developed a technology for growing GaN/AlGaN on 200 mm silicon wafers. With this new technology, GaN MISHEMTs (metal-insulator semiconductor high-electron mobility transistors, metal free high electron mobility transistor (Complementary) can be in strict accordance with the CMOS Metal Oxide Semiconductor, complementary metal oxide semiconductor) production requirements in the process control of pollution (no need to join the precious metal gold), which can produce large quantities of Gan products high quality 200mm on silicon substrate.

IMEC details the advantages of the technology:

1 large scale production

Gallium nitride is a new generation of power devices with the potential to replace silicon. The use of IMEC Applied Materials company MOCVD recently succeeded in 200 mm silicon wafer to produce crack free surface and the bending degree is less than 50 micron Gan silicon wafer is an important milepost, because the production of large size wafer for lower cost effect.

2 good compatibility

How to reduce the cost of the second factors is how to make power devices and standard CMOS manufacturing processes and tools compatible. IMEC new display technology for production of GaN MISHEMTs using standard CMOS process, and verify all the equipment only make adjustments to the tiny in software and hardware. Usually, the precious metal is used in the circuit connection and gate structure of Gan, but it is not compatible with the CMOS process. The IMEC based on the gold free circuit connection system, and the gold free metal insulated semiconductor (MIS) gate structure to solve the compatibility problem. This MISHEMT design can effectively reduce the traditional HEMTs (high electron mobility transistor) high leakage problem.