Japan, a research institute will ZnO UV LED power increased to 100 W

According to Japanese media reports, the Tohoku University Japan and Rom ZnO (Zinc Oxide) led type UV luminescence intensity increased to 100 W, 10 thousand times the original products. The luminescence intensity is about 110 times that of InGaN and GaN UV LED.

Northeastern University of atomic and molecular materials science Higher Education Research Institute Professor Kawasaki Masashi said the results made clear after GaN products on the road.

It is understood, manufacturing LED components using MBE (molecular Shu Waiyan) method, and developed without the use of free radical gas doping (Doping) method. In this way, is expected to adopt a higher production of MOCVD (organic metal vapor deposition) method". The purpose of the object is the white LED used for LCD backlight and lighting. This is from the Northeastern University, Northeastern University Kawasaki Metal Materials Research Institute, Northeastern University Institute of multiple material and research results of Roma have achieved together.

Research team said that the UV LED white LED, compared with the use of blue and yellow collocation LED phosphor InGaN and GaN white LED, is expected to improve the color rendering and color reproduction. In addition, the group also said that the manufacture of class LED GaN is difficult to purchase high-quality low quality single crystal substrate, but ZnO class LED can easily synthesize single crystal substrate. Therefore, it is possible to lower the cost of the production of single crystal substrate with the LED element, which can make the light-emitting layer and the grid easy to match.