In February 9th, the Jiangxi provincial science and Technology Department of Jiangxi Province revealed that the large size Si substrate GaN based LED epitaxial growth, chip fabrication and packaging technology "project won the" 12th Five-Year "national high technology research and development program funded about 50000000 yuan, ranking 14 in the country's first project, the major projects accounted for 21.6% of the total amount.
Recently, the Ministry of science and technology Chinese issued a notice, "12th Five-Year" China high technology research and development program (863 Program) technology in the field of new materials research and development, semiconductor lighting materials technology major project project has been completed, 14 projects in Jiangxi province "of large size Si substrate GaN based LED epitaxial growth, chip fabrication and packaging technology" to get the project etc..
It is reported that Jiangxi province LED lighting project by the Nanchang University national silicon LED engineering technology research center. The engineering center director, vice professor of the Yangtze River forny recommend, which is supported by Engineering Center Deputy Director, 35 year old Wang Li Gan Po excellence person researcher presided. The main topic is the successful development of more cost-effective lighting materials and silicon substrate of LED chip, the introduction of the second generation silicon substrate LED chip, promote industrial chain and innovation chain to high-end development, has gradually formed the international competition of strategic emerging industries.
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