Nakamura Shuji: Status and development of GaN based light emitting devices

In Chinese international semiconductor lighting exhibition and Forum (CHINA SSL2009), Santa Barbara, Professor Nakamura Shuji of the University of California published a report entitled "status quo and development of" GaN based light-emitting devices report.

At present, non-polar Gan (Nonpolar GaN) in LED and LD on the application by the international academia attention, Nakamura Shuji led the UCSB team leads the world, published a nonpolar GaN blue LED. The team developed the LED component has the characteristics of low loss, long life, not only can be applied in the next generation Blu ray storage, with the development of green LD, the future will be applied to the mobile phone micro projector and laser tv.

Professor Nakamura Shuji pointed out in the report, the use of GaN crystal blue violet semiconductor laser element is usually used in GaN crystal surface called C. The so-called non-polar surface refers to the surface perpendicular to the normal direction of the polar surface. Compared with the use of the polar surface, the use of non - polar surface can reduce the leading to the reduction of luminous efficiency of the piezoelectric field, so in theory can improve the luminous efficiency (piezoelectric electric field). At the same time, it also has the characteristics of output polarized light. Based on the above advantages, we can develop a blue violet semiconductor laser element with GaN crystal non polar surface, and successfully complete the pulse oscillation.