Nakamura Shuji said: laser lighting will be a development trend in the future

Nakamura Shuji first compared to the first generation LED and second generation LED, is the first generation in silicon carbide and silicon substrate LED, and the second generation of LED is based on GaN substrate, two compared with the second generation LED GaN base than the first generation has been greatly improved, such as the electric current density and temperature are great improvement. "In terms of performance, we use non polarized and semi polarized methods to study, and in 2007 there is a greater breakthrough, can be achieved.

In the industry warm cheers, the afternoon of November 11, 2013, global attention on semiconductor lighting industry annual event - the tenth Chinese International Semiconductor Lighting Forum (CHINASSL2013) officially kicked off, from the global semiconductor lighting industry experts scholars, government leaders, industry elite gathered in the capital, to discuss the industrial development plan.

In the opening ceremony of the forum link, first by one of the global semiconductor lighting Award for outstanding contributions to the blue, green and white LED inventor, University of California-Santa Barbara Professor Mr. Nakamura Shuji brought a wonderful report for the guests and delegates: "the next generation of semiconductor lighting", aroused much attention.

Nakamura Shuji first compared to the first generation LED and second generation LED, is the first generation in silicon carbide and silicon substrate LED, and the second generation of LED is based on GaN substrate, two compared with the second generation LED GaN base than the first generation has been greatly improved, such as the electric current density and temperature are great improvement. "In terms of performance, we use non polarized and semi polarized way to study, and in 2007 there is a greater breakthrough, you can achieve a 50% reduction in cost, the luminous rate increased by 50%. Nakamura Shuji further said, "GaN substrate with no previous those crystal defects, can not only increase the current density, but also can make the heat increased from 0.4% to 0.5%, so the Gan as substrate LED will be more bright.

In addition, with Gan can reduce the number of LED, make a very beautiful point source, and can reach the level of 75W halogen lamp, and the input power is only 12W, "we also called the laser light, the future will be very promising, the main reason is that the laser light, the efficiency is very high, the current efficiency is 10 ~ 100A/cm2, and the chip is very small. "Finally, Nakamura Shuji stressed that LED is better than Gan sapphire substrate, and the cost is decreased, which can meet the requirements of the existing LED technology, the current density can be increased by 10 times higher than before, the quality of lighting. At the same time plane, using Gan can also use non polarized and polarized, in order to improve its efficiency.

"The next generation of semiconductor lighting may be laser illumination, although there is no large-scale use, but the LED lamp and the laser light, decrease the efficiency of small, increase in the current density, so the laser lighting will be a development trend in the future. "Nakamura Shuji said.