QinetiQ ordering CCS MOCVD system for producing nitride power devices

In November 27, 2007, QinetiQ ordered a 6x2 inch CCS MOCVD equipment to AIXTRON GaN devices used for the development of high performance applications, the new MOCVD equipment will be installed on the Qineti in the micro Nanotechnology Laboratory QMalvern in the UK, the existing laboratory equipment are also included in the epitaxial growth of a 3x2 inch CCS MOCVD.

QinetiQ said keeping the long-term, friendly and AIXTRON reaction chamber model greater yield is the best tool for the new development plan of nitride devices, which can be QinetiQ epitaxial wafer samples to international customers batch supply. AIXTRON new reaction chamber has a minimum downtime, and good inter batch (run-to-run), MOCVD (wafer-to-wafer) reproducibility and consistency, QinetiQ has great confidence in the AIXTRON device. This reaction chamber will initially be used to support a project funded by the UK business, enterprise and institutional reform (BERR), to explore the low cost LED method for solid-state lighting. Although the market for GaN epitaxial materials is LED, laser diode and other optoelectronic devices, it has great potential in the microwave electronics market. There are a growing number of research institutes and companies in the study of how to use nitride based power devices to commercialize.

Note: QinetiQ has advanced expertise in a wide range of optical and electronic technologies, including compound semiconductor devices. QinetiQ has an easy to break record in the fabrication of composite films, and has 35 years experience in material growth and device processing.

Source: China Semiconductor Lighting