Samsung 80 nanometer DRAM process problems tune the 8 inches factory rescue

September 25th news, the world's largest DRAM manufacturer Samsung (Samsung Electronics) expected in the second quarter of 2006, 80 nanometer process products should start small supply, but in order to avoid the coming season, the loss of market for 80 nanometer process conversion bottleneck, three temporary replacement for the star strategy, will be the first move a 8 inch plant capacity by 0.11 micron process to succeed, to weaker demand. Then the 80 nanometer process of production; the current preliminary estimates at least until the first quarter of 2007, the 80 nanometer process to product output, but it is expected that the global DRAM market for Samsung misvalued system the conversion process smooth and greatly affected.

According to Taiwan media reports, it is understood that Samsung turn into the 90 nanometer process time is almost up to 1 to 2 years, and the manufacturing yield is quite stable, so as to enter the 80 nanometer process is not difficult, the original estimate of April 2006 there will be more than 90 nm C generation further products made with 80 nanometer production the generation of D products; however, since the 80 nm is not as first thought to lead to April so far only collected 90 nanometer production DRAM.

But because of the 80 nanometer bottleneck, resulting in this part of the original estimate of new capacity, until now has not opened, will cause the global DRAM market supply continued in a tight state, and face a series of market demand season, Samsung to make a decision immediately, will be replaced by 8 inch plant heavy burden, 0.11 micron process first used in production in 8 inch plant, and the production of goods is first called D goods, goods production and next to 80 nm, will be called the E generation DRAM products.

Although the current Samsung 12 inch wafer factory, and have been working for a long period of time, such as the idea of 0.11 micron process with 12 inches in the factory should be no problem too big, but because most current plant has nearly 12 inches to 90 nanometer process, and more important is the 12 inch plant for Samsung most of production capacity of DRAM or higher NAND Flash goods, on this occasion there is no more than 12 inch Samsung factory can be used for the production of 80 nm, which will select the 0.11 micron process by using the 8 inch standard factory production of DRAM, but it is known that this is only a matter of expediency during rush hours.

DRAM pointed out that even the global process is leading the way to Samsung, the 80 nanometer process seems to have some difficulty, it is no wonder that the rest of the DRAM factory in the moment both groove type (Trench) or stack (Stack) DRAM factory, in the process from 90 nm to 70 nm process also, all have the same problem, caused by the recent global DRAM market supply will be so tight.