Samsung DDR2 to 50 unlimited prospects for Nanotechnology

3D transistor design and multilayer technology based on Samsung Electronics developed a 50 nanometer 1G DDR2 DRAM chip. This chip uses a selective epitaxial growth transistor (selective epitaxial growth transistor, SEG Tr), can produce a wider electron channel, thereby accelerating the flow of electrons. This technology reduces power consumption and improves performance, although Samsung did not disclose more details.

DRAM began to catch up in the capacity of NAND flash memory. In Intel and micron IM joint venture company launched Technologies Flash months 4G NAND flash samples 50 nm process based on Samsung, also at the beginning of the September release of the 32G chip 40 nanometer process technology based on.

For Samsung, from 60 nm to 50 nm, the DRAM output will increase by 55%. Samsung said that this DRAM will be mass production in 2011, and will become the mainstream technology of the total $55 billion in the DRAM market in 2008.