Samsung DRAM chip production technology to improve production next year

Thursday local time, memory chip maker Samsung Electronics announced the world's largest, has successfully used the 70 nanometer production process produced the first DRAM chip. Once this process is widely used in the company's production line, the number of chips produced on the same chip will double.

The more transistors on the chip, the closer the distance between them, the performance of the chip will also be improved. For Samsung, micron and Infineon and other manufacturers, the development of new technology is important to cut costs and increase sales.

DRAM chip online clearinghouse declared that the most widely used DRAM chip prices fell by 1/3 this year, the current price is only $2.53 each. Because of the large demand of the producer, the DRAM on the spot market is as hot as crude oil and wheat.

Samsung is also expected, compared with the current DRAM production line using 90 nanometer production process, the use of new production technology, the number of chips produced on the same piece of silicon at least to increase the number of times of 1. The chip size used to make a chip is the same size as the plate, which can produce thousands of chips.

Samsung spokesman said, we are scheduled for the second half of next year will be 70 nanometer production process is widely used in the production of DRAM chips." At present, the company has this process for the production of NAND flash memory chips, but the DRAM chip is still mainly used 80 and 90 nanometer production process. The company also said in a statement, in order to break through the limitations of the 70 nanometer production technology and improve data refresh function, the company still needs to carry out technical innovation.

Samsung is in the middle of last year began using 90 nanometer production process for the production of DRAM chips, and from the second half of this year began to use the production process of 80 nm. Samsung said that from the beginning of next year, will use 70 nanometer production process, production capacity of 512Mb, 1Gb and 2Gb chip DRAM.