Samsung SDI announced oxide semiconductor TFT driver 12.1 inch organic EL panel technical details

South Korea's Samsung SDI has developed the use of oxide semiconductor IGZO (In-Ga-Zn-O) materials TFT12.1 inch organic EL panel, and in the "SID 2008" published technical details. An active matrix type TFT array and an organic EL element are formed on the glass substrate by using the oxide semiconductor. The development of the organic EL panel element is 1280 x 768 (WXGA), with a resolution of 123ppi. Brightness of 300cd/m2, contrast is 20 thousand: 1. The bottom light emitting structure is used to obtain the light from the bottom side of the TFT substrate. Organic EL materials are made of low molecular materials. But red phosphorescent materials, green and blue with fluorescent materials.

The mask number of TFT is 7. Pixel spacing of 69 m x, m, the original circuit is composed of 2 TFT and 1 capacitors. The gate electrode, the source electrode and the drain electrode material are made of Mo, the gate insulation film is SiOx/SiNx, and the use of the existing lithography manufacturing technology. The mobility of IGZO TFT is 17.2cm2s, the switching ratio is above 108, and the subthreshold slope (S value) is 0.28V/decade.

Samsung SDI pointed out that the use of IGZO's advantage is that it can proceed with the production of large size glass substrate TFT. The use of the TFT production methods, and even support the eighth generation backplane.

Source: Nikkei BP