Rensselaer Polytechnic Institute (RenssELaer Polytechnic Institute) of the smart lighting engineering technology research center announced earlier, has been successfully in the same gallium nitride (GaN) on the integration of LED and power transistor. The researchers said the innovation will open the door to a new generation of LED technology, because of its lower cost, more efficient, and new features and applications are far beyond the scope of lighting.
Figure: component section of GaN LED and HEMT single chip
At present, the core of the LED lighting system is the LED chip made of gallium nitride, but many external components such as inductors, capacitors, silicon interconnects and circuits are required to be installed or integrated into the chip. The integration of these essential components of large size chips will increase the complexity of the design of lighting products. In addition, these complex LED lighting system assembly process is quite slow, not only requires a lot of manual operation, and expensive.
A study led by Professor T. Paul, a professor at the Rensselaer Polytechnic Institute's Department of computer and systems engineering, is trying to address these challenges by developing a chip that is entirely made of gallium nitride. This fully integrated independent chip can simplify the manufacture of LED, reduce assembly and the required automation steps. In addition, due to the use of a single chip, so the failure rate of the parts can also be reduced, and improve energy efficiency and cost-effectiveness, and lighting design flexibility.
Chow and the research team directly on GaN high electron mobility transistor (HEMT) top growth Gan LED structure. They use several basic techniques to interconnect two regions, creating what they call a separate component that integrates HEMT and LED on the same Gan wafer. The growth in the blue stone element on the base plate showing light output and light density can be compared with the standard Gan LED element. Chow said that the study is very important for the development of new light-emitting integrated circuit (light emitting integrated circuit, LEIC) optoelectronic components.
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