Seiko technology to establish the production of silicon carbide wafer grinding technology

Seiko giken established to high speed and high precision grinding have attracted the attention of a new generation of semiconductor base material of silicon carbide (SiC) wafer technology. At present, research institutions and component manufacturers have begun to supply samples.

The technology uses a comprehensive Industrial Technology Research Institute (AIST) public technology. The utility model is characterized in that the utility model adopts the grinding process which does not apply excess pressure to the crystallization of silicon carbide, which can reduce the machining deformation and improve the wafer surface precision. The surface finish of 0.1nm, achieved the epitaxial film growth needs the value of Ra (0.3nm); and to shorten the grinding time to improve production efficiency, is expected to become a new generation of highly anticipated semiconductor floor -- a practical technology of silicon carbide wafer. In addition to silicon carbide, but also can be used in the processing market is rapidly expanding the white LED substrate material sapphire, gallium nitride (GaN), Zinc Oxide (ZnO) crystal, etc..

Sample supply has been started in July 2007, in the future, the company booked in their own factory (Chiba County Matsudo) in the improvement of small batch production system, building production system.

Silicon carbide and base material is the mainstream of current semiconductor silicon (Si) compared with high voltage, resistance to high temperature, small power loss, is expected to be used in power generation and transmission power equipment, communication system and the factory power supply device, electric cars and car driving device to control high voltage and high current device. However, due to the high hardness of silicon carbide, it is difficult to grind, the production technology has been a big problem in the past.

Source: Nikkei BP