The key technologies of ZnO based short wavelength lasers have made an important breakthrough

Jointly undertaken by the Nanjing University and the Chinese Academy of Sciences of Shanghai Institute of Optics and Fine Mechanics.CAS, the National 863 project "ZnO based short wavelength lasers and some key technology research" made an important breakthrough.

The research group after three years thousands of material growth and technological experiment for the first time in the world, the successful development of ZnO based homogeneous PN junction light-emitting devices (LED), at room temperature (29 DEG C) under the blue and yellow light emission. The breakthrough for organic chemical vapor deposition growth of ZnO materials (MOCVD) a series of technical problems of equipment, materials and devices ZnO ZnO thin film material and preparation of single crystal growth and doping and ohmic contact, the formation of ZnO single crystal substrate technology, ZnO technology, ZnO metal MOCVD material MOCVD epitaxial technology and ZnO p type doping and activation in situ control technology and a number of technologies with independent intellectual property rights, is the Tohoku University Japan in aluminium magnesium scandium substrates by molecular beam epitaxy method successfully developed the ZnO based LED after a major scientific and technological achievements, marking the international leading ranks in China has successfully entered the ZnO light emitting device the forefront of strategic high-tech fields the.