Tian Tian made by the light wave with the development of the use of gallium oxide substrate GaN class LED components by the end of 2011 or listed

Japan Tamura produced by light and announced that the developed GaN type LED device using gallium oxide substrate, is expected to be listed in the end of the year 2011 of the element and gallium oxide (Ga2O3) substrate. Compared with the LED element that was previously used as a sapphire substrate, the developed LED element can flow more than 10 times per unit area. The utility model can be used for the purposes of high brightness, such as a headlamp and a projector. In addition, the gallium oxide substrate can be formed by the growth of a simple solution, and therefore, the utility model is a technology which can realize low cost and can also be used for lighting.

Gallium oxide substrate with high conductivity, the use of the substrate of the class LED GaN components can be placed on both sides of the table. The light and the Tamura production developed can significantly reduce the resistance of buffer layer is arranged between the substrate and the gallium oxide technology GaN epitaxial layer, and through the establishment of low resistance n type ohmic contact electrode formed on the gallium oxide substrate technology, implementation of the LED element can pass a large current. Although it is pointed out that the gallium oxide substrate is easy to crack, but it is said that by adjusting the surface of gallium oxide substrate to solve this problem.