Toshiba NEC electronic articles R & D combined with semiconductor processing technology

According to the latest reports in the foreign media, the Toshiba Co of Japan and NEC electronics company, today announced that the two sides have signed an agreement, agreed to jointly develop 45 nanometer CMOS logic processing technology.

Separate R & D semiconductor processing technology is not only time-consuming, and expensive, and can not only improve the system of joint research and development of large scale integrated circuit (LSI) performance and quality, but also reduce the burden on the company and accelerate the process of research and development.

Under the agreement, Toshiba and NEC engineers will cooperate in the development of Toshiba based Advanced Microelectronics Center in Yokohama (Advanced Microelectronics Center) research and development of basic processing technology. In the front of system LSI business, in order to make the system with high speed and low consumption of large-scale integrated circuits used in digital consumer products and mobile communication equipment, development of processing technology is rapid expansion, the current 90 nanotechnology products are batch production. In order to further improve product performance and reduce the energy consumption of the products, the company is currently in full swing to expand the 65 nanometer, and even the development of the treatment of 45 nanometer technology. Compared with the previous 45 nanometer system large-scale integrated circuit research and development work requires more resources, the global system of large scale integrated circuit companies are to strengthen cooperation in this regard, in order to achieve better development results.

In this context, Toshiba Co and NEC Electronics will integrate the two previously developed processor technology and sharing of new technologies. Toshiba and NEC hope to reduce the cost of development and integration of large scale integrated circuits in high-end systems, and shorten the development time.