In January 24th, sponsored by the China semiconductor lighting engineering research and Industry Alliance, sponsored by semiconductor lighting R & D center of Chinese Academy of Sciences "seminar" semiconductor lighting leading key technique training held in China Academy of Sciences Conference Center victory. At the meeting, Wang Liangchen, a researcher at the Institute of semiconductors, Chinese Academy of Sciences, did a report entitled "the key technology of high efficiency and high power LED chips".
In the report, Wang Liangchen researcher deeply introduces the key technologies of power line selection of formal array type LED and progress bar that suits double transparent electrode is better than LED in the thermal properties of light, electricity, traditional formal structure, and is conducive to industrialization; and expounds the vertical structure of power type LED principle, scheme, key bottlenecks and progress technology; vertical graphics technology combined with substrate, ITO and show that the coarse, can obtain the highest extraction rate.
Source: China Semiconductor Lighting Network
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