The group of Professor Kang Junyong research group under the topic of physics and mechanical and Electrical Engineering College of Xiamen University through the nitride deep ultraviolet light-emitting diode in high Al group (LED) is covered with a layer of thin aluminum film surface, so as to break the restriction the light emitting device to more widely used "light extraction efficiency" problem, open a new method and idea for the future of industrial application of such devices in health care, environmental protection, military and other fields. The day before, the research results published in "nature" Publishing Group's online publication covering open "all fields of natural sciences scientific reports on".
The so-called deep ultraviolet, refers to the wave length of 280 nm uv. This light source can play a unique role in water and air purification, disease treatment, information technology and other fields. But for a long time, due to the high aluminum nitride component properties and preparation process, the efficiency of the light emitting diode from deep UV is very low, this also means that the available light electricity into small parts caused by the "light" of the loss, greatly restricts the wider application of deep ultraviolet light-emitting diode.
After several years of research, associate professor Huang Kai and members of the research team of doctoral Gao Na borrow a ultrathin aluminum film solve this problem: when the research group in a deep ultraviolet light-emitting diode coated ultrathin aluminum film layer of only 5 nm, this layer of aluminum film not only did not like the traditional mirror will the device emits light more reflected back, but cleverly collected device to side the light emitted through the aluminum film, the magic shot from the front, the light extraction efficiency.
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