Yan FA: patterned sapphire substrate and the epitaxial growth of MOCVD

In January 24th, sponsored by the China semiconductor lighting engineering research and Industry Alliance, sponsored by semiconductor lighting R & D center of Chinese Academy of Sciences "seminar" semiconductor lighting leading key technique training held in China Academy of Sciences Conference Center victory. At the meeting, the Chinese Academy of Sciences Institute researcher Yan FA semiconductor entitled "patterned sapphire substrate and MOCVD epitaxial growth" report.

In the report, Yan FA researcher through comparing graph substrate and epitaxial lateral technology, reveals the advantages and necessity of the research on patterned substrate technology; the Chinese Academy of Sciences Institute of semiconductor substrate graphics technology progress and results: has mastered the key technology, the foundation of five patent applications, and outstanding achievement in low power chip; finally he, analysis of the development of the professional technology advantage, put forward has production capacity, and the price is more competitive than Taiwan.

Source: China Semiconductor Lighting Network