AZZURRO successfully achieved 150mm (6 inch) wafer GaN-on-Si manufacturing

AZZURRO semiconductor was founded in 2003, the large diameter silicon substrate Gan patented (GaN-on-Si) technology, the technology from the University of Magdeburg in Germany, including WELlington Partners, Good Energies for Emerald and 4 venture capital industry a total of 15 million euros of funds in October 2010, has been officially in Andre Sten (Dresden) and the establishment of the company capacity to commence production.

AZZURRO currently has 2 MOCVD (metal organic chemical vapor deposition) machine, will be completed in October 2011 to complete the production settings, is expected to reach 1400 150mm (6 inch) wafer shipments per month. The future will continue to expand production capacity, plans to reach 10 thousand wafers per month in 2013, and in 2015 reached the capacity of 27 thousand wafers.

Note: using the AZZURRO patent stress control technology, can accurately control the curvature of GaN thin film on a silicon substrate. (click to enlarge)

LED is a fast growing market, the market size of more than $11 billion, regardless of the backlight design TV, laptop and mobile devices, or solid-state lighting applications, where companies are optimistic about the business opportunities, has also attracted many industry investment, the market competition is very fierce.

The LED industry is still in the 50mm (2 inches) or 100mm (4 inches) of the sapphire substrate as the basis, if the use of large diameter silicon substrate of gallium nitride (GaN-on-Si) technology, it is possible to make full use of the existing ecological system of silicon complete technology and economies of scale, reduce the overall cost of LED target. If the current 150mm (6 inch) sapphire substrate and the use of AZZURRO patented GaN-on-Si technology of the 150 mm (6 inch) wafers, can achieve more than 75% of the cost savings of raw materials.

Although GaN-on-Si has a significant cost advantage, but because of technical difficulties, it has not been widely used in the LED industry. The main problem is that due to the different thermal expansion coefficient of the silicon substrate and GaN, the stress will be produced in the process of the lattice dislocation between the two kinds of materials, and then the bow and the thickness of the film will be uneven. The curvature and thickness of the film is not only in the post processing may rupture, and will cause the same wafer on the production of the LED with different peak wavelengths (peak, wavelength) increased after separation (binning) problems. According to AZZURRO in the second quarter of 2011 to complete the 150mm (inch) GaN-on-Si wafers, has reached an average thickness of 6.1 m, standard deviation of 0.062 m, and the average peak wavelength of 451.9nm, the standard deviation of the level of 2.1nm.

In addition, the AZZURRO over the past 12 months, hundreds of wafers for GaN thin film process control data, the standard deviation of the curvature has gradually reduced from m to less than 15 mu m 85. At the same time, the use of enhanced curvature control and compensation (offset) curvature control, can further reduce or achieve the goal of 0 curvature. Even, AZZURRO can be customized according to customer needs, meet the needs of customized curvature.

This is mainly through the AZZURRO patent stress control technology, in order to overcome the curvature and uneven thickness of the film, but also to make the large-diameter GaN-on-Si technology to achieve commercial application of the key. In addition to LED, GaN-on-Si also applies to power semiconductors (power semiconductors), RF/PA and other applications.

Although the industry has doubts about whether GaN-on-Si LED can achieve the same performance with LED or sapphire, but it has been shown that GaN-based LED can achieve a similar performance, and is very suitable for high power and cost-effective solid state lighting applications.

In addition to the cost, GaN-on-Si and sapphire, there are other advantages. It can make use of the existing silicon processing technology, cutting and other post processing technology and resources are very mature and complete. In addition, in the production of HB and UHB LED products required for the mounting (flip chip), silicon crystal material is easier to remove than sapphire, not only can significantly shorten the production cycle, but also to get a better yield.

AZZURRO 150mm (6 inch) GaN-on-Si wafer has now begun to provide samples to the customer, is being certified, is expected by the end of 2011 customers will be able to officially launch the LED component using GaN-on-Si technology. At the same time, before the end of 2011, AZZURRO will be able to provide 200mm (8 inch) wafer GaN-on-Si technology, is expected to be launched in 2012 300mm (12 inches) wafer technology, progress ahead of other operators.

Taiwan has a complete silicon crystal and LED industry chain, is a very important market AZZURRO. AZZURRO is expected to set up a technical and customer service team in Taiwan in mid 2011 in 7, and actively cooperate with the industry to help them from the current sapphire conversion for the production of LED components using silicon crystal substrate architecture. According to AZZURRO's experience with existing customers, about 4 months time can be successfully converted, the future will be further expanded to 200mm (8 inch) wafer applications, substantial cost savings.

About the author:

AZZURRO Semiconductors vice president of business and marketing

The Erwin Ysewijn service since 1989 Hitachi semiconductor company, has accumulated rich experience in marketing and business, and familiar with Asian markets, including Japan, South Korea, Taiwan and Mainland China, was also responsible for the implementation of a number of mergers and acquisitions strategy plan, promote business growth significantly. Prior to joining AZZURRO, Ysewijn was the head of global marketing for Lantiq.