CREE LED, the world's leading manufacturer of new silicon carbide Schottky diode series

Silicon carbide (SiC) power device market leader CREE company, announced the launch of a new series of products before. The series consists of seven 1200V Z-Rec silicon carbide (SiC) Schottky diodes, not only optimized the price and performance, but also provide a variety of rated current and packaging options. Through the introduction of a full range of silicon carbide diode product line, CREE will continue to promote the use of silicon carbide power devices to mainstream power applications.

CREE co-founder and power and radio frequency (RF) product development department chief technology officer John Palmour said: "in order to develop a new generation of power electronic products, design engineers are exploring unique performance advantages of SiC Schottky diode, switching loss including zero reverse recovery loss, not affected by temperature and can work at higher frequency next, can support lower electromagnetic interference (EMI) signal. Under the premise of not affecting the performance, the new series of diodes can achieve a higher current density than the previous generation of silicon carbide Schottky diodes and stronger electronic avalanche performance. CREE's recent innovations in the device design and process improvement of continuing efforts, so that we can provide higher rated current value in reducing the cost at the same time per ampere. "

CREE Z-Rec has zero diode reverse recovery loss characteristics, compared with the same silicon diode, switching loss can be reduced 50%. of the product is highly consistent in the performance of the switch operating temperature range, can simplify the circuit design and design of radiator system omits the complex. With the use of 1200V in SiC Power MOSFET and CREE recently launched, the SiC Schottky diode can achieve full SiC Power electronic circuit operation, the operation of the switching frequency than traditional silicon diode and IGBT can be four times higher. Not only can reduce the size of inverter application circuit, reduce the complexity and cost of the inverter circuit, but also achieve high system efficiency. Compared with the previous generation silicon carbide Schottky diode, the advantage of this series is to have higher surge ratings and electronic avalanche performance, can help improve the overall reliability of the system.

This series of products is very suitable for driving and anti parallel diode diode used as a booster circuit in the solar inverter and three-phase motor, can also be used for power factor correction and UPS device (PFC) diode, can also run in parallel to meet the higher requirements of power.